Products - sf 6-gas Gasbanor (Switzerland) GmbH, Micafluid

SF 6 -gas recovery servicing equipment. Making use of its longstanding expertise of 40 years in gas handling and 100 years in vacuum processing technology, Gasbanor (Switzerland) GmbH, Micafluid offers compact units with all required features for a safe, dependable and environmentally friendly treatment of SF 6 –gas.Get price

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Final Report NF-gaz sf6 10-November 09 - European Commission

3. In the aluminium sector, only one smelter in Europe is using SF 6, though not as a cover gas but as a degassing agent to help eliminate impurities from the molten metal in the production of one special alloy. In 2008, the SF 6 consumption of this plant amounted to 100 t/a. The operator claimed more than 98.5% decomposition ofGet price

Sulfur hexafluoride - Wikipedia

Sulfur hexafluoride or sulphur hexafluoride, is an extremely potent and persistent greenhouse gas that is primarily utilized as an electrical insulator and arc suppressant. It is inorganic, colorless, odorless, non-flammable, and non-toxic. SF 6 has an octahedral geometry, consisting of six fluorine atoms attached to a central sulfur atom. It is a hypervalent molecule. Typical for a nonpolar gas, SF 6 is poorly soluble in water but quite soluble in nonpolar organic solvents. It has a density ofGet price

Decomposition of insulating gas in an RF Plasma Environment

Sulfr hexafluoride clearly increased from 37.79 to 95.68% because of an increase in power from 5 to 20 W. When the power exceeded 40 W, η sf 6 exceeded 99%. When oxygen was introduced into the reactor (feed O 2 /SF 6 ratio = 2.0), η Sulfr hexafluoride was ~10% less than when no oxygen was added (from 28.61 to 86.09% as the power rose from 5 to 20 W). The addition of oxygenGet price

Plasma etching of Si and SiO2 in Sulfr hexafluoride–O2 mixtures: Journal of

Jun 04, 1998 · With an SF 6 ‐O 2 mixture in the absence of silicon, the final reaction products are F 2, SOF 4, and SO 2 F 2. The product distribution was unaffected by small SiO 2 substrates. When Si is etched, SiF 4 is the only stable silicon‐containing etch product and SOF 2 is formed in oxygen‐poor mixtures. Rapid etch rates (≳10 4 Å/min for Si) can be obtained with a high selectivity in favor of silicon (Si:SiO 2 ≳40:1); thus SF 6 ‐O 2 mixtures may represent an attractive alternative toGet price

SimulationsofSiandSiO EtchinginSF +O Plasma

SimulationsofSiandSiO2 EtchinginSulfr hexafluoride+O2 Plasma 481 with SF5 radicals (Eq. (1.3)). At 27% O2, the concen- tration of F atoms approaches the maximum value. At this point, almost all SF5 radicals in gaz sf6 + O2 plasmaGet price

High-aspect-ratio deep Si etching in Sulfr hexafluoride/O2 plasma. II

Jul 28, 2010 · In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching with insulating gas/O2 plasma mixtures. One of the most serious problems for deep Si etching processes is lateral...Get price

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Sulfr hexafluorideRelations (Henan) Co., Ltd. is a professional company focusing on research, production and sales of Sulfr hexafluoride Tools, includ Sulfr hexafluoride Monitoring Analysis equipment.Sulfr hexafluoride Recyling Handling Equipment.insulating gas On-site service and training.There is a place where you’ll get the Perfect insulating gas solution for all your needs. We have 421 employees , factory covering as large as 4000 Sq. meters, and sales office in Henan Zhengzhou.Get price

Did anyone have experience in etching SiO2 with sf 6 in ICP

The gasese we have are: sf 6(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:Get price

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Cepco Sales are officially authorized distributors for electrical test equipment in Saudi Arabia; Baur, Megger, MR, High Volt, Fuji Tecom, Dilo, MicaFluid, and Metrel. Our products include cable test vans, relay test equipment, cable fault location equipment, water leak detection devices, tap changers, much more.Get price

[PDF] Anisotrapic Reactive Ion Etching of Silicon Using SF 6

Reactive ion etching of silicon in an RF parallel plate system, using gaz sf6/O2/CHF3, plasmas has been studied. Etching behavior was found to be a function of loading, the cathode material, and the mask material. Good results with respect to reproducibility and uniformity have been obtained by using silicon as the cathode material and silicon dioxide as the masking material for mask designs whereGet price

Inductively coupled plasma etching of SiC in sf6 gas/O2 and etch

4H silicon carbide (SiC) substrates were dry etched in an inductively coupled plasma (ICP) system, using sf6 gas/O2 gas mixtures. Etch rate and etch mechanisms have been investigated as a function of o...Get price

Silicon nitride etch characteristics in insulating gas/O2 and C3F6O/O2

Effects of process parameters on the etch rate and generation of etch by-product molecules during Si 3 N 4 layer etching in SF 6 /O 2 and C 3 F 6 O/O 2 plasmas were investigated in a dual-frequency capacitively coupled plasma etcher in order to evaluate the etch characteristics and global warming effects of emitted gases.Get price

Sulfr hexafluoride service carts – Synergy Power Systems

Under the supervision of an expert from TÜV SÜD, the following insulating gas service carts (representing the entire product range) were tested: B143R11 – Mini Series L030R01 – Piccolo SeriesGet price

Two Cryogenic Processes Involving sf6 gas, O2, and SiF4 for

gaz sf6 or Sulfr hexafluoride/O2 plasmas are used as etch cycles and SiF4/O2 plasmas are used as passivation cycles. Trenches with a critical dimension of 0.8 µm have been etched to a depth of 38 µm with anGet price

Chemistry studies of Sulfr hexafluoride/CF4, sf 6/O2 and CF4/O2 gas phase

In this work, mass spectrometry and optical emission spectroscopy techniques were used to monitor the molecular and atomic neutral species during SF 6 /CF 4, SF 6 /O 2 and CF 4 /O 2 plasmas generated in a radio-frequency Hollow Cathode Reactive Ion Etching (HCRIE) reactor keeping constant the following operational conditions: total gas flow rate, gas pressure, and discharge power.Get price

Hydrogen vehicle - Wikipedia

Also in 2019, Katsushi Inoue, the president of Honda Europe, stated, "Our focus is on hybrid and electric vehicles now. Maybe hydrogen fuel cell cars will come, but that’s a technology for the next era." A 2020 assessment concluded that hydrogen vehicles are still only 38% efficient, while battery EVs are 80% efficient.Get price

Comparison of Partial Discharges in insulating gas and Fluoronitrile/CO2

Oct 03, 2017 · • insulating gas has been used successfully for decades in the power industry. • One big shortcoming – has a high global warming potential (23,500) • Included in Kyoto Protocol (1997) on the list to be limited. Global annual insulating gas emissions from electrical equipment are reported by ECOFYS: 1,600 t to 2,800 t SF 6. That equals to 37,600 kt to 65,800Get price

Gasbanor - Az-Teknik

sf 6 – Gas Treatment and Recovery Unit for circuit breakers and small gas compartments GTRU -020 small service cart www.gasbanor.com Product features ompact, robust and mobile unit Designed for servicing small breakers For efficient gas handling of small gas compartments Made with Swiss engineering heavy duty componentsGet price

Modification of Si(100)-Surfaces by insulating gas Plasma Etching

808 M. REICHE et al.: Modification of Si(100)-Surfaces such as SF 6, CF 4, or CHF 3 and their mixtures with O 2, N 2, or H 2 are widely applied. All these gases are characterized by a different selectivity of etching silicon or SiOGet price

Study of the roughness in a photoresist masked, isotropic

Study of the roughness in a photoresist masked, isotropic, Sulfr hexafluoride-based ICP silicon etch Larsen, Kristian Pontoppidan; Petersen, Dirch Hjorth; Hansen, Ole Published in: Journal of The Electrochemical Society Link to article, DOI: 10.1149/1.2357723 Publication date: 2006 Document Version PublisherPDF, also known as Version of record Link back toGet price

The effects of several gases (He, N2, N2O, and sf 6) on gas

During the second part of the study the effect of different mixtures of Sulfr hexafluoride and O2 on the amount of gas trapped was examined. All the results indicated that diffusion of gases through liquid walls of menisci or bubbles that occlude the airways is responsible for trapped gas in excised lungs.Get price

PAPER OPEN ACCESS Anisotropic plasma etching of Silicon in

Content from this work may be used under the terms of the CreativeCommonsAttribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.Get price

Selective SiO2/Al2O3 Etching in CF4 and Sulfr hexafluoride High-Density

Eastern Europe specialist literature Selective SiO2/Al2O3 Etching in CF4 and Sulfr hexafluoride High-Density Silicon Shallow Trench Etch Using NBr/Cl2/He-O2 Chemistry. ZhaoGet price

Formation of Nanoscale Structures by Inductively Coupled

@article{osti_1116140, title = {Formation of Nanoscale Structures by Inductively Coupled Plasma Etching.}, author = {Henry, Michael David and Welch, Colin and Olynick, Deirdre and Liu, Zuwei and Holmberg, Anders and Peroz, Christopher and Robinson, Alex and Scherer, Axel and Mollenhauer, Thomas and Genova, Vince}, abstractNote = {Abstract not provided.}, doi = {}, url = { www.osti.govGet price

1,2 ID 2 ID - MDPI

materials Article Comparison of Sulfr hexafluoride and CF4 Plasma Treatment for Surface Hydrophobization of PET Polymer Matic Resnik 1,2 ID, Rok Zaplotnik 2 ID, Miran Mozetic 2 and Alenka Vesel 2,* IDGet price

dilo Sulfr hexafluoride decomposition measurement tools exporters

dilo Sulfr hexafluoride decomposition measurement tools exportersDecomposition products Gas purity in % DILO offers a complete range of measuring devices for all applications including: room monitoring systems, leak detectors, measuring devices to deter-mine the SF 6 quality as well as relevant accessories for simple on-site measurement and retrofit kits for old measuring devices.Get price